American Fairfield Inc.
Diamond/Al
Diamond/Al
Excellent heat dissipation combined with high thermal expansion of semiconductor chips makes DO/Al materials very suitable for use in packaging of microelectronics and optoelectronic products required for high thermal conductivity. Because the thermal conductivity is as high as 500W/mK and the coefficient of thermal expansion is only 6.1 ppm/K (40 to 100°C), the DO/Al heat sink can provide a very attractive solution for most packaging types.
Advantages
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Thermal conductivity 500W/mK
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Coefficient of thermal expansion(CTE)matches with different semiconductor materials
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Heat sink can be nickel plated or chemical plated
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Very high maching accuracy and excellent surfaceplanarization
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Easy processing guarantees rapid sample preparation and sample reworkability.
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Specialized engineering and technical personnel assist costomers in designing application components.
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Plane, irregular shape, step geometry processing can be completed.
Data Sheet
Collapsible content
DO/Al Material Property
- Thermal conductivity: 500W/mK
- Coefficient of thermal expansion(CTE)
- 40-100°C:6.1 ppm/K
- 40-200°C:7.1 ppm/K
- 40-300°C:7.9 ppm/K
- Density:3.17 g/cc
- Flex strength:206 MPa
- Modulus:309 GPa
- Specific heat:0.62 J/gK
- Conductivity:3.7 x 10-7ohm•m
- Melting point:570°C
- Diamond content:57(Vol%)
Precision Machining Property
- Tolerance
- Plane direction ±0.1-0.15mm
- Thickness direction ±0.1mm
- Surface planarization(Ra)
- 0.30μm before electroplating
- 0.40μm after electroplating
Metallization Property
- Bottom plating
- Chemical nickel-plating 1-10μm±0.5μm
- Outer plating
- Chemical gold-plating 0.03-0.1μm
- Gold plating 0.5-5μm±0.5μm
Application
- Power device packaging
- RF, microwave,centimeter wave products: - LDMOS FET - HBT - MESFET; - Bipolar - HEMT - MMIC
- Laser diode - Pluse - CW - Single Emitters Bars
- Complex machined housing for theproduction of optoelectronic products: - Amplifiers - Receiver - Transmitters;
- Tunable Lasers Modulators - Light-emitting diodes and detectors
The thermal expansion coefficient of the DO/Al heat sink is perfectly matched to semiconductor chip materials such as Si, GaN, GaAs, and SiC.