Diamond/Al

Diamond/Al

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  • Power device packaging

  • RF, microwave, centimeter wave products

    - LDMOSFET - HBT - MESFET
    - Bipolar - HEMT - MMIC
  • Laser diode

    - Pluse - CW - Single Emitters Bars

  • Complex machined housing for theproduction of optoelectronic products

    - Amplifiers - Receiver - Transmitters
    - Tunable Lasers Modulators
  • Light-emitting diodes and detectors

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  • Thermal conductivity 500W/mK

  • CTE matches with different semiconductor materials

  • Heat sink can be nickel plated or chemical plated

  • Sample preparation and sample reworkability.

The thermal expansion coefficient of the DO/Al heat sink is perfectly matched to semiconductor chip materials such as Si, GaN, GaAs, and SiC.

Thermal conductivity is as high as 500W/mK and the CTE is only 6.1 ppm/K (40 to 100°C), the DO/Al heat sink can provide a very attractive solution for most packaging types.